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Indium phosphide



         


Indium phosphide (InP) is a semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

Properties
General
NameIndium phosphide
Chemical FormulaInP
AppearanceDark gray cubic crystals
Structure
Formula weight145.79 amu
Lattice constant0.58687 nm
Crystal structureZinc-blende
Physical
State of matter at STPsolid
Melting point at SP1333 K
Boiling point at SP?
Specific gravity4.81
Electronic
Band gap at 300K1.344 eV
Electron effective mass0.073 me
Hole effective mass0.64 me
Electron mobility at 300 K0.46 m2/V·s
Hole mobility at 300 K0.015 m2/V·s
Precautions
Toxic?
Decompostion products?
SI units were used where possible.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by:

<math> n^2(\lambda) = 1 + 7.255 + \frac{2.316 \lambda^2 }{ \lambda^2 - 0.6263^2} + \frac{2.765 \lambda^2 }{ \lambda^2 - 32.935^2} <math>

where λ is the wavelength in micrometres.

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